BS IEC 62047-34-2019 pdf free download – Semiconductor devices – Micro- electromechanical devices Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer

02-12-2022 comment

BS IEC 62047-34-2019 pdf free download – Semiconductor devices – Micro- electromechanical devices Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer.
4Test conditions
4.1Atmospheric conditions
The measurement of characteristics shall be carried out under the following atmosphericconditions unless otherwise specified.
a) Standard atmospheric conditions
Temperature range: 15C to 35°C;Relative humidity range: 20 % to 80 %;
Atmospheric pressure range: 86 kPa to 106 kPa.b) Standard reference atmospheric conditions
Temperature: 20 °C;
Relative humidity: 65 %;
Atmospheric pressure: 101,3 kPa.
The standard reference atmospheric conditions are corrected values derived from testingvalues under any other atmospheric conditions. ln most circumstances,temperature andatmospheric pressure are the only factors to be considered.
4.2Electromagnetic conditions
No other external magnetic field should exist in the testing environment except geomagneticfield.The specific requirements should be in accordance with the device technical conditions.
4.3Vibration conditions
No mechanical vibration should exist in the testing environment. The specific requirementsshould be in accordance with the device technical conditions.
4.4Test system
The test system consists of probe station,pressure control device,heating and coolingsystem,excitation power supply,as well as ‘reading and recording device. The toleranceerrors of the test system are listed below.
a) The absolute value of the intrinsic error of pressure control device should be under 1/3 of the intrinsic error bound of the pressure-sensitive device.
b) The temperature measurement accuracy of heating and cooling system should be ±2 °C around the preset temperature.
c) The fluctuation of excitation power supply should be under 1/5 of the intrinsic error boundof the pressure-sensitive device.
d) The absolute value of the intrinsic error of the reading and recording device should be
under 1/5 of the intrinsic error bound of the pressure-sensitive device.
5 General provisions
5.1Certificate documents
The verification certificates of instrument and meter issued by metrological verificationinstitutions should be required and valid.
5.2Placement and preheating time
The instrument and meter should be powered on for preheating before the test. Thepreheating time should be in accordance with the operation manual.
5.3Connection
The test system is built according to its spool drawing and circuit diagram.
6 Test items and methods
6.1 Test preparation
The resistance test system of the probe station should be calibrated using standardresistance substrate. Build the test system according to 5.3. Fix the wafer on the probestation and the probe (or probe card) should be in the same horizontal plane.Adjust theheight of the wafer supporting stage and the scanning horizontal line to insure reliableconnection between the wafer pins and the probes during testing.Set the parameters of thesystem.
6.2Resistance6.2.1 Purpose
To measure the resistance value of the pressure-sensitive device.
6.2.2Test methods
Connect the pressure-sensitive device pins with the reading and recording device throughprobes complying with the general provisions set out in 5.1 to 5.3 and the test preparationdescribed in 6.1.
a)Closed loop piezoresistive pressure-sensitive device
For closed loop bridge shown in Figure 1 , measure the resistance between pin 1 and pin 3, as well as the resistance between pin 2 and pin 4.BS IEC 62047-34 pdf download.

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